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Mobility μ is the drift velocity per unit electric field: μ = vd/E.
Units: m² V⁻¹ s⁻¹. Also, vd = μE and σ = nqμ (n-type single carrier).
For metals, the ratio of thermal to electrical conductivity is proportional to absolute temperature:
K/σ = L T, where L is the Lorenz (Lorentz) number.
Theoretical L: L = \pi^2 k_B^2/(3e^2) ≈ 2.44×10⁻⁸ W Ω K⁻².
m* is the apparent inertial mass of an electron in a crystal responding to a force, determined by band curvature:
1/m* = (1/\hbar^2)\, d²E/dk² (from E–k diagram). It can be anisotropic, positive/negative, and differs from free mass m_e.
Electrical conductivity: σ = n q² τ / m*.
| Aspect | Rest mass (me) | Effective mass (m*) |
|---|---|---|
| Definition | Mass of free electron in vacuum | Band-structure dependent inertial mass in crystal |
| Value | 9.11×10⁻³¹ kg (constant) | Varies with E–k; can be ±, tensor |
| Origin | Intrinsic property | From periodic potential curvature |
Fermi–Dirac statistics applies (quantum, indistinguishable fermions, Pauli principle).
Occupation probability: f(E)=1/[1+e^{(E−E_F)/(k_B T)}]. At T=0, all E<E_F filled.
Here n = carrier density, q = e, τ = relaxation time, m* = effective mass.
A hole is an empty state in the valence band behaving like a mobile particle of charge +e and effective mass m*_h.
Under an electric field it drifts opposite to electron motion; current density J_p = q p μ_p E. Holes dominate in p-type material.
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